| PART |
Description |
Maker |
| MX29LA129MLTI-90R MX29GL033MBMC-10G MX29GL033MBMC- |
128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX23L12854MC-20G |
128M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
MACRONIX INTERNATIONAL CO LTD
|
| UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| AD5330 AD5330BRU AD5331 AD5331BRU AD5333 AD5335 AD |
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 12-Bit DAC with Byte-Load Parallel Interface in 20-lead TSSOP
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 20-lead TSSOP
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 8-Bit DAC with Parallel Interface in 20-lead TSSOP
From old datasheet system
D/A CONVERTER,SINGLE,8-BIT,CMOS,SSOP,20PIN
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
Analog Devices Inc
AD[Analog Devices]
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
